IRF 830 ماسفت VIS MOSFET, N-Channel, 500V, 4.5 A, RDS(on) 1.5 R , TO-220 IRF830

Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 8 A
Rds On - Drain-Source Resistance: 850 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube

Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 20 ns
Height: 9.01 mm
Length: 10.41 mm
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 125 W
Rise Time: 23 ns
Factory Pack Quantity: 1000
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 14 ns
Width: 4.7 mm
Unit Weight: 0.211644 oz